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BF1101 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BF1101 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 16 page 1999 May 14 5 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR Fig.5 Transfer characteristics; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 0 20 8 12 16 4 0 0.4 MGS299 0.8 1.2 1.6 2 ID (mA) VG1-S (V) 3.5 V 3 V 2.5 V 2 V 1 V 1.5 V VG2-S = 4 V Fig.6 Output characteristics; typical values. VG2-S =4V. Tj =25 °C. handbook, halfpage 0 20 8 12 16 4 0 2 MGS300 468 ID (mA) VDS (V) 1.5 V 1.4 V 1.3 V 1.2 V 1.1 V 1 V VG1-S = 1.6 V Fig.7 Gate 1 current as a function of gate 1 voltage; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 0 100 40 60 80 20 0 0.5 MGS301 1 1.5 2 2.5 IG1 ( µA) VG1-S (V) 3.5 V 3 V 2.5 V 2 V VG2-S = 4 V Fig.8 Forward transfer admittance as a function of drain current; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 0 40 20 30 10 0 816 412 20 MGS302 ID (mA) yfs (mS) 3 V 2.5 V 2 V VG2-S = 4 V 3.5 V |
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