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BF1101 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BF1101 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 16 page 1999 May 14 4 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR STATIC CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. RG1 connects G1 to VGG = 5 V; see Fig.21. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VG2-S = 4 V; VDS = 5 V; ID = 12 mA; unless otherwise specified. Note 1. Measured in test circuit of Fig.21. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)DSS drain-source breakdown voltage VG1-S =VG2-S = 0; ID =10 µA7 − V V(BR)G1-SS gate 1-source breakdown voltage VG2-S =VDS = 0; IG1-S = 10 mA 7 16 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-S = 10 mA 7 16 V V(F)S-G1 forward source-gate 1 voltage VG2-S =VDS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage VG1-S =VDS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S (th) gate 1-source threshold voltage VG2-S =4V; VDS =5V; ID = 100 µA 0.3 1.0 V VG2-S (th) gate 2-source threshold voltage VG1-S =5V; VDS =5V; ID = 100 µA 0.3 1.2 V IDSX drain-source current VG2-S =4V; VDS =5V; RG1 = 120 kΩ; note 1 816 mA IG1-SS gate 1 cut-off current VG2-S =VDS = 0; VG1-S =5V − 50 nA IG2-SS gate 2 cut-off current VG1-S =VDS = 0; VG2-S =4V − 20 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj =25 °C 253040mS Cig1-ss input capacitance at gate 1 f = 1 MHz − 2.2 2.7 pF Cig2-ss input capacitance at gate 2 f = 1 MHz − 1.6 − pF Coss output capacitance f = 1 MHz − 1.2 − pF Crss reverse transfer capacitance f = 1 MHz − 25 35 fF F noise figure f = 800 MHz; YS =YS opt − 1.7 2.5 dB Xmod cross-modulation input level for k = 1% at 0 dB AGC; fw = 50 MHz; funw = 60 MHz; note 1 85 −− dB µV input level for k = 1% at 40 dB AGC; fw = 50 MHz; funw = 60 MHz; note 1 100 −− dB µV |
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