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BF1109 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BF1109 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 1997 Dec 08 6 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR Fig.9 Drain current as a function of drain-source voltage; typical values. VG2-S =4V. Tj =25 °C. handbook, halfpage 02 10 16 12 4 0 8 46 8 MDA617 ID (mA) VDS (V) Fig.10 Drain current as a function of gate 1 current; typical values. VDS = 9 V; VG2-S = 4 V; Tj =25 °C. handbook, halfpage −8 −6 −40 MDA618 −2 16 8 12 4 0 ID (mA) IG1 (µA) VDS = 9 V; VG2nom = 4 V; IDnom = 12 mA; fw = 50 MHz; funw = 60 MHz; Tamb =25 °C. Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see Fig.18). handbook, halfpage 020 Vunw (dB µV) gain reduction (dB) 40 60 120 110 90 80 100 MDA619 |
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