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BF1109 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF1109 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 16 page 1997 Dec 08 3 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 11 V ID drain current (DC) − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation Tamb ≤ 80 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − +150 °C Fig.4 Power derating curve. handbook, halfpage 0 40 80 160 250 0 200 MGM243 120 150 100 50 Ptot (mW) Tamb (°C) |
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