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BF1202 Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza BF1202
Descripción Electrónicos  N-channel dual-gate PoLo MOS-FETs
Download  16 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF1202 Datasheet(HTML) 4 Page - NXP Semiconductors

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2000 Mar 29
4
Philips Semiconductors
Product specification
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R;
BF1202WR
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. RG1 connects G1 to VGG =5V.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 12 mA; unless otherwise specified.
Note
1. Measured in Fig.21 test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VG1-S =VG2-S = 0; ID =10 µA10
V
V(BR)G1-SS gate 1-source breakdown voltage
VG2-S =VDS = 0; IG1-S =10mA
6
V
V(BR)G2-SS gate 2-source breakdown voltage
VG1-S =VDS = 0; IG2-S =10mA
6
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S =VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S =VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VG2-S =4V; VDS =5V; ID = 100 µA
0.3
1.0
V
VG2-S(th)
gate 2-source threshold voltage
VG1-S =5V; VDS =5V; ID = 100 µA
0.3
1.2
V
IDSX
drain-source current
VG2-S =4V; VDS =5V; RG1 = 120 kΩ;
note 1
816
mA
IG1-SS
gate 1 cut-off current
VG2-S =VDS = 0; VG1-S =5V
50
nA
IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S =4V
20
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
pulsed; Tj =25 °C
253040mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
1.7
2.2
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz
1
pF
Coss
output capacitance
f = 1 MHz
0.85
pF
Crss
reverse transfer capacitance f = 1 MHz
15
30
fF
F
noise figure
f = 10.7 MHz; GS = 20 mS; BS =0
911
dB
f = 400 MHz; YS =YS opt
0.9
1.5
dB
f = 800 MHz; YS =YS opt
1.1
1.8
dB
Gtr
power gain
f = 200 MHz; GS = 2 mS; BS =BS opt;
GL = 0.5 mS; BL =BL opt
34.5
dB
f = 400 MHz; GS = 2 mS; BS =BS opt;
GL = 1 mS; BL =BL opt
30.5
dB
f = 800 MHz; GS = 3.3 mS; BS =BS opt;
GL = 1 mS; BL =BL opt
26.5
dB
Xmod
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 1
at 0 dB AGC
90
−−
dB
µV
at 10 dB AGC
92
dB
µV
at 40 dB AGC
100
105
dB
µV


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