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BF1201WR Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF1201WR Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 16 page 2000 Mar 29 3 Philips Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R; BF1201WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Ts is the temperature of the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 10 V ID drain current (DC) − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation BF1201; BF1201R Ts ≤ 113 °C; note 1 − 200 mW BF1201WR Ts ≤ 109 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point BF1201; BF1201R 185 K/W BF1201WR 155 K/W handbook, halfpage 050 (1) (2) Ts (°C) Ptot (mW) 100 200 250 0 200 150 150 100 50 MCD934 Fig.4 Power derating curve. (1) BF1201WR. (2) BF1201 and BF1201R. |
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