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BF324 Datasheet(Hoja de datos) 3 Page - NXP Semiconductors

No. de Pieza. BF324
Descripción  PNP medium frequency transistor
Descarga  8 Pages
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Fabricante  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
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 3 page
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1997 Jul 07
3
Philips Semiconductors
Product specification
PNP medium frequency transistor
BF324
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−30
V
VCEO
collector-emitter voltage
open base
−−30
V
VEBO
emitter-base voltage
open collector
−−4V
IC
collector current (DC)
−−25
mA
ICM
peak collector current
−−25
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
420
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−−−50
nA
IEBO
emitter cut-off current
IC = 0; VEB = −4V
−−−100
nA
hFE
DC current gain
VCE = −10 V
IC = −1mA
45
IC = −4mA
25
−−
VBE
base-emitter voltage
IC = −4 mA; VCE = −10 V
760
mV
Crb
feedback capacitance
IC = 0; VCE = −10 V; f = 1 MHz
−−
0.3
pF
fT
transition frequency
VCE = −10 V; f = 100 MHz
IC = −1mA
350
MHz
IC = −4 mA
400
450
MHz
IC = −8mA
440
MHz




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