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BF410A Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF410A Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 6 page December 1990 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE STATIC CHARACTERISTICS Tamb =25 °C Drain-source voltage VDS max. 20 V Drain-gate voltage (open source) VDGO max. 20 V Drain current (DC or average) ID max. 30 mA Gate current ± I G max. 10 mA Total power dissipation up to Tamb =75 °CPtot max. 300 mW Storage temperature range Tstg −65 to +150 °C Junction temperature Tj max. 150 °C From junction to ambient in free air Rth j-a = 250 K/W Gate cut-off current BF410A B C D −VGS = 0.2 V; VDS =0 −IGSS max. 10 10 10 10 nA Gate-drain breakdown voltage IS =0; −ID =10 µA −V(BR)GDO min. 20 20 20 20 V Drain current VDS = 10 V; VGS =0 IDSS min. 0.7 2.5 6 10 mA max. 3.0 7.0 12 18 mA Gate-source cut-off voltage ID =10 µA; VDS = 10 V −V(P)GS typ. 0.8 1.5 2.2 3 V |
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