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BF423 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BF423
Descripción Electrónicos  PNP high-voltage transistors
Download  6 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF423 Datasheet(HTML) 3 Page - NXP Semiconductors

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2004 Nov 10
3
Philips Semiconductors
Product specification
PNP high voltage transistors
BF421; BF423
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on a printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on a printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BF421
−−300
V
BF423
−−250
V
VCEO
collector-emitter voltage
open base
BF421
−−300
V
BF423
−−250
V
VEBO
emitter-base voltage
open collector
−−5V
IC
collector current (DC)
−−50
mA
ICM
peak collector current
−−100
mA
IBM
peak base current
−−50
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
830
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = −200 V; IE =0 A
−−10
nA
VCB = −200 V; IE = 0 A; Tj = 150 °C
−−10
µA
IEBO
emitter-base cut-off current
VEB = −5 V; IC =0 A
−−50
nA
hFE
DC current gain
VCE = −20 V; IC = −25 mA
50
VCEsat
collector-emitter saturation voltage
IC = −30 mA; IB = −5mA
−−0.6
V
Cre
feedback capacitance
VCE = −30 V; IC =ic = 0 A; f = 1 MHz
1.6
pF
fT
transition frequency
VCE = −10 V; IC = −10 mA; f = 100 MHz
60
MHz


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