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BF423 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF423 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 6 page 2004 Nov 10 3 Philips Semiconductors Product specification PNP high voltage transistors BF421; BF423 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on a printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on a printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF421 −−300 V BF423 −−250 V VCEO collector-emitter voltage open base BF421 −−300 V BF423 −−250 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−50 mA ICM peak collector current −−100 mA IBM peak base current −−50 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 830 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 150 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current VCB = −200 V; IE =0 A −−10 nA VCB = −200 V; IE = 0 A; Tj = 150 °C −−10 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0 A −−50 nA hFE DC current gain VCE = −20 V; IC = −25 mA 50 − VCEsat collector-emitter saturation voltage IC = −30 mA; IB = −5mA −−0.6 V Cre feedback capacitance VCE = −30 V; IC =ic = 0 A; f = 1 MHz − 1.6 pF fT transition frequency VCE = −10 V; IC = −10 mA; f = 100 MHz 60 − MHz |
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