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BF510 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BF510 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page December 1997 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513). PINNING - SOT23 1 = gate 2 = drain 3 = source MARKING CODE BF510 = S6p BF511 = S7p BF512 = S8p BF513 = S9p Fig.1 Simplified outline and symbol. handbook, halfpage 12 g d s 3 Top view MAM385 QUICK REFERENCE DATA Drain-source voltage VDS max. 20 V Drain current (DC or average) ID max. 30 mA Total power dissipation up to Tamb =40 °CPtot max. 250 mW BF510 511 512 513 Drain current > 0.7 2.5 6 10 mA VDS = 10 V; VGS = 0 IDSS < 3.0 7.0 12 18 mA Transfer admittance (common source) VDS = 10 V; VGS = 0; f = 1 kHz yfs > 2.5 4 6 7 mS Feedback capacitance VDS = 10 V; VGS =0 Crs typ. 0.3 0.3 −− pF VDS = 10 V; ID = 5 mA Crs typ. −− 0.3 0.3 pF Noise figure at optimum source admittance GS = 1 mS; −BS = 3 mS; f = 100 MHz VDS = 10 V; VGS = 0 F typ. 1.5 1.5 −− dB VDS = 10 V; ID = 5 mA F typ. −− 1.5 1.5 dB |
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