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BF556B Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BF556B
Descripción Electrónicos  N-channel silicon junction field-effect transistors
Download  11 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF556B Datasheet(HTML) 3 Page - NXP Semiconductors

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1996 Jul 29
3
Philips Semiconductors
Product specification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−±30
V
VGSO
gate-source voltage
open drain
−−30
V
VGDO
gate-drain voltage (DC)
open source
−−30
V
IG
forward gate current (DC)
10
mA
Ptot
total power dissipation
up to Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
−65
150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage IG = −1 µA; VDS =0
−30
−−
V
VGSoff
gate-source cut-off voltage
ID = 200 µA; VDS =15V
−0.5
−7.5
V
IDSS
drain current
VGS = 0; VDS =15V
BF556A
3
7mA
BF556B
6
13
mA
BF556C
11
18
mA
IGSS
gate leakage current
VGS = −20 V; VDS =0
−−0.5
−5000
pA
yfs
forward transfer admittance
VGS = 0; VDS = 15 V
4.5
−−
mS
yos
common source output
admittance
VGS = 0; VDS =15V
40
−µS


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