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BF556B Datasheet(PDF) 3 Page - NXP Semiconductors |
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BF556B Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 11 page 1996 Jul 29 3 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. STATIC CHARACTERISTICS Tj =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) −±30 V VGSO gate-source voltage open drain −−30 V VGDO gate-drain voltage (DC) open source −−30 V IG forward gate current (DC) − 10 mA Ptot total power dissipation up to Tamb =25 °C; note 1 − 250 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient; note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS =0 −30 −− V VGSoff gate-source cut-off voltage ID = 200 µA; VDS =15V −0.5 −7.5 V IDSS drain current VGS = 0; VDS =15V BF556A 3 − 7mA BF556B 6 − 13 mA BF556C 11 − 18 mA IGSS gate leakage current VGS = −20 V; VDS =0 −−0.5 −5000 pA yfs forward transfer admittance VGS = 0; VDS = 15 V 4.5 −− mS yos common source output admittance VGS = 0; VDS =15V − 40 −µS |
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