BF591 datasheet(3/8 Pages) PHILIPS

No. de pieza	BF591

Descripción Electrónicos	NPN high-voltage transistors

Download	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	PHILIPS [NXP Semiconductors]

Página de inicio	http://www.nxp.com

Logo

3 / 8 page

1997 Jul 02

3

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistors

BF591; BF593

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.01.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BF591

−

210

V

BF593

−

250

V

VCEO

collector-emitter voltage

open base

BF591

−

170

V

BF593

−

210

V

VEBO

emitter-base voltage

open collector

−

5V

IC

collector current (DC)

−

150

mA

ICM

peak collector current

−

300

mA

IBM

peak base current

−

100

mA

Ptot

total power dissipation

Tamb ≤ 55 °C

−

1.3

W

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient in free air

73

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−

50

nA

IE = 0; VCB =60V; Tj = 140 °C

−

1

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

100

nA

hFE

DC current gain

note 1

IC = 20 mA; VCE =5V

30

−

IC = 100 mA; VCE =6V

30

−

IC = 150 mA; VCE =7V

20

−

Número de pieza similar - BF591

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Siemens Semiconductor G...	BF599	61Kb / 4P	NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion)
KEC(Korea Electronics)	BF599	125Kb / 1P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)
Diotec Semiconductor	BF599	171Kb / 2P	Surface mount Si-Epitaxial PlanarTransistors
KEC(Korea Electronics)	BF599	177Kb / 5P	2SC3229
KEC(Korea Electronics)	BF599	34Kb / 1P	EPITAXIAL PLANAR NPN TRANSISTOR

More results

Descripción similar - BF591

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Seme LAB	2N3439	18Kb / 2P	HIGH VOLTAGE NPN TRANSISTORS
NXP Semiconductors	2N5550	43Kb / 8P	NPN high-voltage transistors 1999 Apr 23
	BF720	42Kb / 8P	NPN high-voltage transistors 1999 Apr 21
	BF820W	52Kb / 8P	NPN high-voltage transistors 1997 Sep 03
	BST39	40Kb / 8P	NPN high-voltage transistors 1999 Apr 26
	PMST5550	57Kb / 8P	NPN high-voltage transistors 1999 Apr 29
	BF820_BF822	105Kb / 6P	NPN high-voltage transistors 2004 Jan 16
Guangdong Kexin Industr...	BSR19	39Kb / 2P	NPN High-Voltage Transistors
Weitron Technology	MPSA44	895Kb / 4P	High-Voltage NPN Transistors
Guangdong Kexin Industr...	BST39	52Kb / 2P	NPN High-Voltage Transistors
NXP Semiconductors	BF720	104Kb / 6P	NPN high-voltage transistors 1999 Apr 21

More results

BF591 Datasheet(PDF) 3 Page - NXP Semiconductors

BF591 Datasheet(HTML) 3 Page - NXP Semiconductors

Número de pieza similar - BF591

Descripción similar - BF591

Html Pages

1 2 3 4 5 6 7 8

Datasheet Descarga

Enlace URL