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Q0365R Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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Q0365R Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 19 page © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSQ0365RN, FSQ0265RN, FSQ0165RN, FSQ311 Rev. 1.0.0 4 Absolute Maximum Ratings The “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum ratings. TA = 25°C, unless otherwise specified. Notes: 6. Repetitive rating: Pulse width limited by maximum junction temperature. 7. L=14mH, starting TJ=25°C. 8. Meets JEDEC Standards JESD 22-A114 and 22-A115. Thermal Impedance(9) Notes: 9. All items are tested with the standards JESD 51-2 and 51-10 (DIP). 10. Free-standing, with no heat-sink, under natural convection. 11. Infinite cooling condition - refer to the SEMI G30-88. 12. Measured on the PKG top surface. Symbol Parameter Min. Max. Unit Vstr Vstr Pin Voltage 500 V VDS Drain Pin Voltage 650 V VCC Supply Voltage 20 V VFB Feedback Voltage Range -0.3 9.0 V VSync Sync Pin Voltage -0.3 9.0 V IDM Drain Current Pulsed(6) FSQ0365RN 12 A FSQ0265RN 8 FSQ0165RN 4 FSQ311 1.5 EAS Single Pulsed Avalanche Energy(7) FSQ0365RN 230 mJ FSQ0265RN 140 FSQ0165RN 50 FSQ311 10 PD Total Power Dissipation 1.5 W TJ Operating Junction Temperature Internally limited °C TA Operating Ambient Temperature -25 85 °C TSTG Storage Temperature -55 150 °C ESD Capability, HBM Model(8) CLASS1 C ESD Capability, Machine Model(8) CLASS B Symbol Parameter Value Unit 8-DIP θJA(10) Junction-to-Ambient Thermal Resistance 80 °C/W θJC(11) Junction-to-Case Thermal Resistance 20 θJT(12) Junction-to-Top Thermal Resistance 35 |
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