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BF991 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de Pieza. BF991
Descripción  N-channel dual-gate MOS-FET
Descarga  5 Pages
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Fabricante  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
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BF991 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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April 1991
3
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF991
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
20
V
ID
drain current (DC)
20
mA
ID(AV)
average drain current
20
mA
IG1-S
gate 1-source current
−±10
mA
IG2-S
gate 2-source current
−±10
mA
Ptot
total power dissipation
up to Tamb =60 °C; note 1
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Fig.2 Power derating curve.
handbook, halfpage
0
200
0
100
200
MGE792
100
Tamb (°C)
Ptot
(mW)
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8
× 10 × 0.7 mm.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
460
K/W


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