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BF998 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BF998 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 1996 Aug 01 5 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R Fig.5 Output characteristics; typical values. handbook, halfpage 010 24 0 8 16 4 12 20 MGE813 2468 VDS (V) ID (mA) 0.4 V 0.3 V 0.2 V 0.1 V 0 V −0.5 V −0.4 V −0.3 V −0.2 V −0.1 V VG1-S = VG2-S = 4 V; Tamb =25 °C. Fig.6 Transfer characteristics; typical values. handbook, halfpage −11 24 0 8 16 4 12 20 MGE815 0 3 V 2 V 1 V 0 V VG2-S = 4 V VG1 (V) ID (mA) VDS = 8 V; Tamb =25 °C. Fig.7 Drain current as a function of gate 1 voltage; typical values. handbook, halfpage −1600 −400 −800 −1200 400 24 0 8 16 4 12 20 MGE814 0 max typ min VG1 (mV) ID (mA) VDS = 8 V; VG2-S = 4 V; Tamb =25 °C. Fig.8 Forward transfer admittance as a function of drain current; typical values. handbook, halfpage 020 30 0 6 12 18 24 MGE811 16 12 8 4 ID (mA) 0.5 V 4 V 1 V 2 V 3 V VG2-S = 0 V |yfs| (mS) VDS = 8 V; Tamb =25 °C. |
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