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BF998 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BF998 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 1996 Aug 01 6 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R Fig.9 Forward transfer admittance as a function of gate 1 voltage; typical values. VDS = 8 V; Tamb =25 °C. handbook, halfpage −11 30 0 6 12 18 24 MGE812 0 VG1 (V) 0 V 1 V 2 V 3 V VG2-S = 4 V |yfs| (mS) Fig.10 Output capacitance as a function of drain-source voltage; typical values. handbook, halfpage 414 1.5 1.0 1.1 1.2 1.3 1.4 MGE810 Cos (pF) 6 8 10 12 VDS (V) 12 mA 10 mA 8 mA VG2-S = 4 V; f = 1 MHz; Tamb =25 °C. Fig.11 Gate 1 input capacitance as a function of gate 1-source voltage; typical values. handbook, halfpage −2.4 −1.6 −0.8 0.8 MGE809 0 2.1 1.9 1.7 2.3 1.5 1.3 Cis (pF) VG1-S (V) VDS = 8 V; VG2-S = 4 V; f = 1 MHz; Tamb =25 °C. Fig.12 Gate 1 input capacitance as a function of gate 2-source voltage; typical values. handbook, halfpage 64 2 Cis (pF) −2 2.4 2.3 2.1 2.0 2.2 MBH479 0 VG2−S (V) VDS = 8 V; VG1-S = 0 V; f = 1 MHz; Tamb =25 °C. |
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