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BFY50 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFY50 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Apr 22 2 Philips Semiconductors Product specification NPN medium power transistors BFY50; BFY51; BFY52 FEATURES • High current (max. 1 A) • Low voltage (max. 35 V). APPLICATIONS • General purpose industrial applications. DESCRIPTION NPN medium power transistor in a TO-39 metal package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. handbook, halfpage 3 1 2 MAM317 1 2 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter BFY50 −− 80 V BFY51 −− 60 V BFY52 −− 40 V VCEO collector-emitter voltage open base BFY50 −− 35 V BFY51 −− 30 V BFY52 −− 20 V ICM peak collector current −− 1A Ptot total power dissipation Tamb ≤ 25 °C −− 800 mW Tcase ≤ 100 °C −− 2.86 W hFE DC current gain IC = 150 mA; VCE =10V BFY50 30 112 − BFY51 40 123 − BFY52 60 142 − fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz BFY50 60 −− MHz BFY51; BFY52 50 −− MHz |
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