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AM29PDL129H53 Datasheet(PDF) 9 Page - SPANSION

No. de pieza AM29PDL129H53
Descripción Electrónicos  128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control and Dual chip Enable
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November 2, 2005
Am29PDL129H
7
PIN DESCRIPTION
A21–A0
=
22-bit address bus for 2 x 64 Mb de-
vice. A9 supports 12 V autoselect in-
puts.
DQ15–DQ0 =
16-bit data inputs/outputs/float
CE1#, CE2# =
Chip Enable Inputs. CE1# controls
the 64 Mb in Banks 1A and 1B.
CE2# controls the 64 Mb in Banks
2A and 2B.
OE#
=
Output Enable Input
WE#
=
Write Enable
VSS
=
Device Ground
NC
=
Pin Not Connected Internally
RY/BY#
=
Ready/Busy output and open drain.
When RY/BY#= VIH, the device is
ready to accept read operations and
commands. When RY/BY#= VOL,
the device is either executing an em-
bedded algorithm or the device is
executing a hardware reset opera-
tion.
WP#/ACC
=
Write Protect/Acceleration Input.
When WP/ACC#= VIL, the highest
and lowest two 4K-word sectors are
write protected regardless of other
sector protection configurations.
When WP/ACC#= VIH, these sector
are unprotected unless the DYB or
PPB is programmed. When WP/
ACC#= 12V, program and erase op-
erations are accelerated.
VIO
=
Input/Output Buffer Power Supply
(1.65 V to 1.95 V or 2.7 V to 3.6 V)
VCC
=
Chip Power Supply
(2.7 V to 3.6 V)
RESET#
=
Hardware Reset Pin
LOGIC SYMBOL
22
16
DQ15–DQ0
A21–A0
CE1#
OE#
WE#
RESET#
RY/BY#
WP#/ACC
VIO (VCCQ)
CE2#


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