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ADP3031ARM Datasheet(PDF) 3 Page - Analog Devices |
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ADP3031ARM Datasheet(HTML) 3 Page - Analog Devices |
3 / 8 page ADP3031 REV. PrB –3– PRELIMINARY TECHNICAL DATA ABSOLUTE MAXIMUM RATINGS* Input Voltage .............................................. –0.3 V to +6 V SW Voltage ................................................................. 14 V COMP Voltage ........................................ –0.3 V to +2.5 V FB Voltage ............................................... –0.3 V to +1.3 V SD Voltage .................................................. –0.3 V to +6 V RT Voltage ............................................... –0.3 V to +1.2 V PGND TO GND ................................................ ±200 mV Operating Ambient Temperature Range ...... –40°C to 85°C Operating Junction Temperature Range ..... –40°C to 125°C Storage Temperature Range .................... –65°C to +150°C θ JA Two Layer ..................................................... 206°C/W θ JA Four Layer ..................................................... 142°C/W Lead Temperature Range (Soldering, 60 sec.) .......... 300°C *This is a stress rating only; operation beyond these limits can cause the device to be permanently damaged. Unless otherwise specified, all voltages are referenced to GND ORDERING GUIDE Voltage Package Branding Model Output Option Information ADP3031ARM ADJ MSOP-8 P8A PIN FUNCTION DESCRIPTIONS Pin Mnemonic Function 1 COMP Compensation Input. 2 FB Feedback voltage sense input. 3 SD Shutdown Input. 4 PGND Power Ground. Ground return for power transistor. 5 SW Switching Output. 6 IN Main Power Supply Input. 7 RT Frequency Setting Input. A resistor between this pin and GND sets the switching frequency of the device. 8 GND Analog Ground. The control circuitry is referenced to this ground. PIN CONFIGURATION CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the device features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recom- mended to avoid performance degradation or loss of functionality. Figure 1. Typical Application 1 2 3 4 8 7 6 5 TOP VIEW (Not to Scale) MSOP8 COMP FB SW SD PGND IN RT GND REF RAMP GEN Q S R F/F DRIVER CURRENT SENSE AMPLIFIER COMP SW FB IN COMPARATOR ERROR AMP PGND BIAS 1 gm 2 5 SD VOUT ADP3031 7 IN VOUT OSC RT GND 4 6 8 R1 R2 RT CC 3 CIN COUT D1 L1 RC |
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