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SI7842DP Datasheet(PDF) 1 Page - Vishay Siliconix

No. de Pieza. SI7842DP
Descripción  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Descarga  5 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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SI7842DP Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D LITTLE FOOT Plust Schottky
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg Tested
APPLICATIONS
D Bus and Logic DC-DC
Si7842DP
Vishay Siliconix
Document Number: 71617
S-31728—Rev. B, 18-Aug-03
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
30
0.022 @ VGS = 10 V
10
30
0.030 @ VGS = 4.5 V
8.5
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
30
0.50 V @ 1.0 A
3.0
N-Channel MOSFET
D1
G1
S1
N-Channel MOSFET
D2
G2
S2
Schottky Diode
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
Ordering Information: Si7842DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
10
6.3
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
6.0
5.0
A
Pulsed Drain Current
IDM
30
A
Continuous Source Current (Diode Conduction)a
IS
2.9
1.1
Maximum Power Dissipationa
TA = 25_C
PD
3.5
1.4
W
Maximum Power Dissipationa
TA = 70_C
PD
2.2
0.9
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Mi
J
ti
t A bi
ta
t
v 10 sec
R
26
35
26
35
Maximum Junction-to-Ambienta
Steady-State
RthJA
60
85
60
85
_C/W
Maximum Junction-to-Case (Drain)
Steady-State
RthJC
3.9
5.5
3.9
5.5
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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