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DSEP2X91-06A Datasheet(PDF) 1 Page - IXYS Corporation |
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DSEP2X91-06A Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 2 page © 2000 IXYS All rights reserved 1 - 2 HiPerFREDTM Epitaxial Diode with soft recovery Features q International standard package miniBLOC q Isolation voltage 2500 V~ q UL registered E 72873 q 2 independent FRED in 1 package q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low I RM-values q Soft recovery behaviour Applications q Antiparallel diode for high frequency switching devices q Antisaturation diode q Snubber diode q Free wheeling diode in converters and motor control circuits q Rectifiers in switch mode power supplies (SMPS) q Inductive heating q Uninterruptible power supplies (UPS) q Ultrasonic cleaners and welders Advantages q Avalanche voltage rated for reliable operation q Soft reverse recovery for low EMI/RFI q Low I RM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf miniBLOC, SOT-227 B Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. DSEP 2x 91-06A I FAV = 2x 90 A V RRM = 600 V t rr = 35 ns V RSM V RRM Type V V 600 600 DSEP 2x 91-06A Symbol Conditions Maximum Ratings I FRMS 100 A I FAVM T C = 55°C; rectangular, d = 0.5 90 A I FSM T VJ = 45°C; tp = 10 ms (50 Hz), sine 1000 A E AS T VJ = 25°C; non-repetitive 0.4 mJ I AS = 2 A; L = 180 µH I AR V A = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A T VJ -40...+150 °C T VJM 150 °C T stg -40...+150 °C P tot T C = 25°C 200 W V ISOL 50/60 Hz, RMS 2500 V~ I ISOL £ 1 mA M d mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in. terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in. Weight typical 30 g Symbol Conditions Characteristic Values typ. max. I R x T VJ = 25°C V R = VRRM 1mA T VJ = 150°C VR = VRRM 4mA V F y I F = 90 A; T VJ = 125°C 1.52 V T VJ = 25°C 2.05 V R thJC 0.6 K/W R thCH 0.1 K/W t rr I F = 1 A; -di/dt = 400 A/ ms; 35 ns V R = 30 V; TVJ = 25°C I RM V R = 100 V; I F = 200 A; -diF/dt = 100 A/ ms 10.2 A T VJ = 100°C |
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