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DSEP2X91-06A Datasheet(PDF) 1 Page - IXYS Corporation

No. de Pieza. DSEP2X91-06A
Descripción  HiPerFRED Epitaxial Diode with soft recovery
Descarga  2 Pages
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Fabricante  IXYS [IXYS Corporation]
Página de inicio  http://www.ixys.com
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DSEP2X91-06A Datasheet(HTML) 1 Page - IXYS Corporation

   
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© 2000 IXYS All rights reserved
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HiPerFREDTM Epitaxial Diode
with soft recovery
Features
q International standard package
miniBLOC
q Isolation voltage 2500 V~
q UL registered E 72873
q 2 independent FRED in 1 package
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low I
RM-values
q Soft recovery behaviour
Applications
q Antiparallel diode for high frequency
switching devices
q Antisaturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q Avalanche voltage rated for reliable
operation
q Soft reverse recovery for low
EMI/RFI
q Low I
RM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
miniBLOC, SOT-227 B
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300
ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 2x 91-06A
I
FAV
= 2x 90 A
V
RRM = 600 V
t
rr
= 35 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEP 2x 91-06A
Symbol
Conditions
Maximum Ratings
I
FRMS
100
A
I
FAVM
T
C = 55°C; rectangular, d = 0.5
90
A
I
FSM
T
VJ = 45°C; tp = 10 ms (50 Hz), sine
1000
A
E
AS
T
VJ = 25°C; non-repetitive
0.4
mJ
I
AS = 2 A; L = 180 µH
I
AR
V
A = 1.5·VR typ.; f = 10 kHz; repetitive
0.2
A
T
VJ
-40...+150
°C
T
VJM
150
°C
T
stg
-40...+150
°C
P
tot
T
C = 25°C
200
W
V
ISOL
50/60 Hz, RMS
2500
V~
I
ISOL £ 1 mA
M
d
mounting torque (M4)
1.1-1.5/9-13
Nm/lb.in.
terminal connection torque (M4)
1.1-1.5/9-13
Nm/lb.in.
Weight
typical
30
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ = 25°C
V
R = VRRM
1mA
T
VJ = 150°C VR = VRRM
4mA
V
F
y
I
F = 90 A;
T
VJ = 125°C
1.52
V
T
VJ = 25°C
2.05
V
R
thJC
0.6
K/W
R
thCH
0.1
K/W
t
rr
I
F = 1 A; -di/dt = 400 A/
ms;
35
ns
V
R = 30 V; TVJ = 25°C
I
RM
V
R = 100 V;
I
F = 200 A; -diF/dt = 100 A/
ms
10.2
A
T
VJ = 100°C


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