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FP1189-PCB900S Datasheet(PDF) 1 Page - WJ Communication. Inc.

No. de Pieza. FP1189-PCB900S
Descripción  1/2 - Watt HFET
Descarga  12 Pages
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Fabricante  WJCI [WJ Communication. Inc.]
Página de inicio  http://www.wj.com
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FP1189-PCB900S Datasheet(HTML) 1 Page - WJ Communication. Inc.

 
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Specifications and information are subject to change without notice.
WJ Communications, Inc
• Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com
September 2004
FP1189
½ - Watt HFET
Product Information
Product Features
50 – 4000 MHz
+27 dBm P1dB
+40 dBm Output IP3
High Drain Efficiency
20.5 dB Gain @ 900 MHz
Lead-free/Green/RoHS-
compliant
SOT-89 Package
MTTF >100 Years
Applications
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Product Description
The FP1189 is a high performance ½-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 125 mA to achieve +40 dBm output IP3
performance and an output power of +27 dBm at 1-dB
compression, while providing 20.5 dB gain at 900 MHz.
The device conforms to WJ Communications’ long history
of producing high reliability and quality components. The
FP1189 has an associated MTTF of greater than 100 years
at a mounting temperature of 85
°C and is available in both
the standard SOT-89 package and the environmentally-
friendly lead-free/green/RoHS-compliant and green SOT-
89 package. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
Function
Pin No.
Input / Gate
1
Output / Drain
3
Ground
2, 4
Specifications
DC Parameter
Units
Min
Typ
Max
Saturated Drain Current, Idss
(1)
mA
220
290
360
Transconductance, Gm
mS
155
Pinch Off Voltage, Vp
(2)
V
-2.1
RF Parameter
(3)
Units
Min
Typ
Max
Operational Bandwidth
MHz
50 - 4000
Test Frequency
MHz
800
Small Signal Gain
dB
20.5
SS Gain (50
Ω, unmatched)
dB
17
21
Maximum Stable Gain
dB
24
Output P1dB
dBm
+27.4
Output IP3
(4)
dBm
+40
Noise Figure
dB
2.7
Drain Bias
+8 V @ 125 mA
1. Idss is measured with Vgs = 0 V, V ds = 3 V.
2. Pinch-off voltage is measured when Ids = 1.2 mA.
3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 125 mA, in a tuned application
circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power).
4. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C
DC Power
2.0 W
RF Input Power (continuous)
6 dB above Input P1dB
Drain to Gate Voltage, Vdg
+14 V
Junction Temperature
+220
° C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(5)
Parameter
Units
Typical
Frequency
MHz
915
1960
2140
2450
Gain
dB
20.6
15.7
14.7
13.2
Input Return Loss
dB
13
26
24
36
Output Return Loss
dB
6.0
9.6
9.0
7.6
Output P1dB
dBm
+27.4
+27.2
+27.2 +28.1
Output IP3
(4)
dBm
+39.9
+40.4
+39.7 +40.0
Noise Figure
dB
2.7
3.7
4.3
IS-95 Channel Power
@ -45 dBc ACPR
dBm
+21
+20.8
W-CDMA Ch. Power
@ -45 dBc ACLR
+18.4
Drain Voltage
V
+8
Drain Current
mA
125
5. Typical parameters represent performance in a tuned application circuit.
Ordering Information
Part No.
Description
FP1189
½ -Watt HFET
(leaded SOT-89 Pkg)
FP1189-G
½ -Watt HFET
(lead-free/green/RoHS-compliant SOT-89 Pkg)
FP1189-PCB900S
870 – 960 MHz Application Circuit
FP1189-PCB1900S
1930 – 1990 MHz Application Circuit
FP1189-PCB2140S
2110 – 2170 MHz Application Circuit
RF IN
GND
RF OUT
GND
1
2
3
4


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