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IBIS4-6600
Datasheet
Cypress Semiconductor Corporation
3901 North First Street
San Jose, CA 95134
408-943-2600
Contact: info@Fillfactory.com
Document #: 38-05708 Rev.**(Revision 1.3 )
Page 6 of 63
2 Specifications
2.1 General specifications
Table 1: General specifications
Parameter
Specification
Remarks
Pixel
architecture
3T-pixel
Pixel size
3.5
µm x 3.5 µm
Resolution
2210 x3002
The resolution and pixel size results in a
7,74 mm x 10,51 mm optical active area.
Pixel rate
40 MHz
Using a 40 MHz system clock and 1 or 2
parallel outputs.
Shutter type
Electronic rolling
shutter
Full frame
rate
5 frames/second
Increases with ROI read out and/or sub
sampling.
2.2 Electro-optical specifications
2.2.1 Overview
Table 2: Electro-optical specifications
Parameter
Specification
Remarks
FPN (local)
<0.35 %
RMS % of saturation signal.
PRNU (local)
<1.5%
RMS of signal level.
Conversion gain
37 uV/electron
@ output (measured).
Output signal
amplitude
0.8V
At nominal conditions.
Saturation charge 21.500 e-
283 V.m2/W.s
Average white light.
Sensitivity
1.57 V/lux.s
Visible band only (180 lx = 1 W/m2).
Peak QE * FF
Peak SR * FF
22.5 %
0.12 A/W
Average QE*FF = 20% (visible range).
Average SR*FF = 0.1 A/W (visible range).
See spectral response curve.
Fill factor
50%
Light sensitive part of pixel.
Dark current (@
21 °C)
6.29 mV/s
170 e-/s
Typical value of average dark current of the
whole pixel array.
Temporal noise
20 RMS e-
Measured at digital output (in the dark).
Dynamic range
1100:1
940:1
Full: 61 dB.
Linear: 59.5 dB.