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NLAST9431 Datasheet(PDF) 1 Page - ON Semiconductor

No. de Pieza. NLAST9431
Descripción  Low Voltage Single Supply Dual DPDT Analog Switch
Descarga  11 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NLAST9431 Datasheet(HTML) 1 Page - ON Semiconductor

 
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© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1
Publication Order Number:
NLAST9431/D
NLAST9431
Low Voltage Single Supply
Dual DPDT Analog Switch
The NLAST9431 is an advanced CMOS dual−independent DPDT
(double pole−double throw) analog switch, fabricated with silicon
gate CMOS technology. It achieves high−speed propagation delays
and low ON resistances while maintaining CMOS low−power
dissipation. This DPDT controls analog and digital voltages that may
vary across the full power−supply range (from VCC to GND).
The device has been designed so the ON resistance (RON) is much
lower and more linear over input voltage than RON of typical CMOS
analog switches.
The channel−select input structure provides protection when
voltages between 0 V and 5.5 V are applied, regardless of the supply
voltage. This input structure helps prevent device destruction caused
by supply voltage − input/output voltage mismatch, battery backup,
hot insertion, etc.
The NLAST9431 can also be used as a quad 2−to−1 multiplexer−
demultiplexer analog switch with two Select pins that each controls
two multiplexer−demultiplexers.
Select Pins Compatible with TTL Levels
Channel Select Input Overvoltage Tolerant to 5.5 V
Fast Switching and Propagation Speeds
Break−Before−Make Circuitry
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
Diode Protection Provided on Channel Select Input
Improved Linearity and Lower ON Resistance over Input Voltage
Latch−up Performance Exceeds 300 mA
Chip Complexity: 158 FETs
Pb−Free Packages are Available
MARKING
DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
BB
= Specific Device Code
M
= Date Code & Assembly Location
G
= Pb−Free Device
WQFN16
CASE 488AP
BB M
G
16
1


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