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MC68HC908GR16A Datasheet(PDF) 38 Page - Freescale Semiconductor, Inc

No. de Pieza. MC68HC908GR16A
Descripción  M68HC08 Microcontrollers
Descarga  270 Pages
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Fabricante  FREESCALE [Freescale Semiconductor, Inc]
Página de inicio  http://www.freescale.com
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MC68HC908GR16A Datasheet(HTML) 38 Page - Freescale Semiconductor, Inc

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MC68HC908GR16A Data Sheet, Rev. 1.0
38
Freescale Semiconductor
2.6.2 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operations.
HVEN — High-Voltage Enable Bit
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
Setting this read/write bit configures the 16-Kbyte FLASH array for mass erase operation.
1 = MASS erase operation selected
0 = PAGE erase operation selected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation unselected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Program operation selected
0 = Program operation unselected
1. No security feature is absolutely secure. However, Freescale’s strategy is to make reading or copying the FLASH difficult for
unauthorized users.
Address:
$FE08
Bit 7
654321
Bit 0
Read:
0000
HVEN
MASS
ERASE
PGM
Write:
Reset:
00000000
= Unimplemented
Figure 2-3. FLASH Control Register (FLCR)


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