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MC68HC908GR16A Datasheet(PDF) 39 Page - Freescale Semiconductor, Inc

No. de Pieza. MC68HC908GR16A
Descripción  M68HC08 Microcontrollers
Descarga  270 Pages
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Fabricante  FREESCALE [Freescale Semiconductor, Inc]
Página de inicio  http://www.freescale.com
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MC68HC908GR16A Datasheet(HTML) 39 Page - Freescale Semiconductor, Inc

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FLASH Memory (FLASH)
MC68HC908GR16A Data Sheet, Rev. 1.0
Freescale Semiconductor
39
2.6.3 FLASH Page Erase Operation
Use this step-by-step procedure to erase a page (64 bytes) of FLASH memory. A page consists of 64
consecutive bytes starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 36-byte user interrupt
vectors area also forms a page. Any FLASH memory page can be erased alone.
1.
Set the ERASE bit, and clear the MASS bit in the FLASH control register.
2.
Read the FLASH block protect register.
3.
Write any data to any FLASH location within the page address range of the block to be erased.
4.
Wait for a time, tNVS (minimum 10 µs)
5.
Set the HVEN bit.
6.
Wait for a time, tErase (minimum 1 ms or 4 ms)
7.
Clear the ERASE bit.
8.
Wait for a time, tNVH (minimum 5 µs)
9.
Clear the HVEN bit.
10.
After a time, tRCV (typical 1 µs), the memory can be accessed in read mode again.
NOTE
Programming and erasing of FLASH locations cannot be performed by
code being executed from FLASH memory. While these operations must be
performed in the order shown, other unrelated operations may occur
between the steps.
In applications that need more than 1000 program/erase cycles, use the 4-ms page erase specification
to get improved long-term reliability. Any application can use this 4-ms page erase specification.
However, in applications where a FLASH location will be erased and reprogrammed less than 1000 times,
and speed is important, use the 1-ms page erase specification to get a shorter cycle time.
2.6.4 FLASH Mass Erase Operation
Use this step-by-step procedure to erase entire FLASH memory:
1.
Set both the ERASE bit, and the MASS bit in the FLASH control register.
2.
Read the FLASH block protect register.
3.
Write any data to any FLASH address(1) within the FLASH memory address range.
4.
Wait for a time, tNVS (minimum 10 µs)
5.
Set the HVEN bit.
6.
Wait for a time, tMErase (minimum 4 ms)
7.
Clear the ERASE and MASS bits.
NOTE
Mass erase is disabled whenever any block is protected (FLBPR does not
equal $FF).
8.
Wait for a time, tNVHL (minimum 100 µs)
9.
Clear the HVEN bit.
10.
After a time, tRCV (typical 1 µs), the memory can be accessed in read mode again.
1. When in monitor mode, with security sequence failed (see 19.3.2 Security), write to the FLASH block protect register instead
of any FLASH address.


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