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NB3N3011 Datasheet(PDF) 3 Page - ON Semiconductor

No. de Pieza. NB3N3011
Descripción  3.3 V 100 MHz / 106.25 MHz PureEdge Clock Generator with LVPECL Differential Output
Descarga  7 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NB3N3011 Datasheet(HTML) 3 Page - ON Semiconductor

   
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Table 4. POWER SUPPLY DC CHARACTERISTICS, (VCC = 3.3 V ±5%, TA = −40°C to 85°C)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCC
Core Supply Voltage
3.135
3.3
3.465
V
VCCA
Analog Supply Voltage
3.135
3.3
3.465
V
ICCA
Analog Supply Current
Included in IEE
19
23
mA
IEE
Power Supply Current
27
31
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 5. LVPECL DC CHARACTERISTICS, (VCC = 3.3 V ±5%, TA = −40°C to 85°C)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VOH
Output High Voltage (Note 2)
VCC − 1.4
VCC − 0.9
V
VOL
Output Low Voltage (Note 2)
VCC − 2.0
VCC − 1.7
V
VSWING Peak−to−Peak Output Voltage Swing
0.6
0.75
1.0
V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Outputs terminated with 50 W to VCC − 2.0 V. See Figures 4 and 12.
Table 6. PIN CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
CIN
Input Capacitance
4
pF
Table 7. CRYSTAL CHARACTERISTICS (Fundamental Mode 18 pF Parallel Resonant Crystal)
Parameter
Conditions
Min
Typ
Max
Unit
Frequency
24
30
MHz
Equivalent Series Resistance (ESR)
50
W
Shunt Capacitance
7.0
pF
Table 8. AC CHARACTERISTICS, (VCC = 3.3 V ±5%, TA = −40°C to 85°C (Note 4))
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fOUT
Output Frequency
24 MHz − 30 MHz Crystal
(Typ. 25 MHz − 26.5625 MHz)
96
100/106.25
120
MHz
tjit(∅)
RMS Phase Jitter (Random)
(Note 3)
106.25 MHz; Integration Range:
637 kHz −10 MHz
0.29
ps
100 MHz; Integration Range:
637 kHz −10 MHz
0.29
tR/tF
Output Rise/Fall Time
20% to 80% (See Figure 7)
275
600
ps
odc
Output Duty Cycle
(See Figure 6)
48
52
%
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Please refer to the Phase Noise Plot.
4. Output terminated with 50 W to VCC− 2.0 V. See Figures 4 and 12.


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