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DIM200PKM33-F000 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DIM200PKM33-F000 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 10 page SEMICONDUCTOR DIM200PKM33-F000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 4/10 www.dynexsemi.com THERMAL AND MECHANICAL RATINGS Internal insulation material: AIN Baseplate material: AlSiC Creepage distance: 33mm Clearance: 20mm CTI (Critical Tracking Index): 175 Symbol Parameter Test Conditions Min. Typ. Max. Units Rth(j-c) Thermal resistance - transistor Continuous dissipation – junction to case - - 48 °C/kW Thermal resistance – diode (IGBT arm) Rth(j-c) Thermal resistance- diode ( Diode arm) Continuous dissipation – junction to case - - 96 96 °C/kW °C/kW Rth(c-h) Thermal resistance – case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - - 16 °C/kW Tj Junction temperature Transistor - - 150 °C Diode - - 125 °C Tstg Storage temperature range - -40 - 125 °C - Screw torque Mounting – M6 - - 5 Nm Electrical connections – M5 - - 4 Nm |
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Descripción similar - DIM200PKM33-F000 |
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