SEMICONDUCTOR

DIM200PKM33-F000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

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THERMAL AND MECHANICAL RATINGS

Internal insulation material:

AIN

Baseplate material:

AlSiC

Creepage distance:

33mm

Clearance:

20mm

CTI (Critical Tracking Index):

175

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Thermal resistance - transistor

Continuous dissipation –

junction to case

-

-

48

°C/kW

Thermal resistance – diode (IGBT

arm)

Thermal resistance- diode ( Diode

arm)

Continuous dissipation –

junction to case

-

-

96

96

°C/kW

°C/kW

Thermal resistance – case to heatsink

(per module)

Mounting torque 5Nm

(with mounting grease)

-

-

16

°C/kW

Junction temperature

Transistor

-

-

150

°C

Diode

-

-

125

°C

Storage temperature range

-

-40

-

125

°C

-

Screw torque

Mounting – M6

-

-

5

Nm

Electrical connections – M5

-

-

4

Nm