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DIM200PKM33-F000 Datasheet(PDF) 6 Page - Dynex Semiconductor

No. de pieza DIM200PKM33-F000
Descripción Electrónicos  IGBT Chopper Module
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Fabricante Electrónico  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM200PKM33-F000 Datasheet(HTML) 6 Page - Dynex Semiconductor

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SEMICONDUCTOR
DIM200PKM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
6/10
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
td(off)
Turn-off delay time
IC = 200A
-
1950
-
ns
tf
Fall time
VGE = ±15V
-
170
-
ns
EOFF
Turn-off energy loss
VCE = 1800V
-
220
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 16.5
-
1180
-
ns
tr
Rise time
L
∼ 100nH
-
225
-
ns
Qg
Gate charge
Cge = 56nF
-
5
-
µC
EON
Turn-on energy loss
RG(ON) = 7.5
-
290
-
mJ
Qrr
Diode reverse recovery charge
IF = 200A, VR = 1800V,
-
80
-
µC
Irr
Diode reverse current
dlF/dt = 1600A/µs
-
144
-
A
EREC
Diode reverse recovery energy
Diode arm
-
75
-
mJ
Tcase = 125°C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
td(off)
Turn-off delay time
IC = 200A
-
2200
-
ns
tf
Fall time
VGE = ±15V
-
190
-
ns
EOFF
Turn-off energy loss
VCE = 1800V
-
265
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 16.5
-
1150
-
ns
tr
Rise time
L
∼ 100nH, Cge = 56nF
-
280
-
ns
EON
Turn-on energy loss
RG(ON) = 7.5
-
390
-
mJ
Qrr
Diode reverse recovery charge
IF = 200A, VR = 1800V,
-
125
-
µC
Irr
Diode reverse current
dlF/dt = 1600A/µs
-
155
-
A
EREC
Diode reverse recovery energy
Diode arm
-
130
-
mJ


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