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DIM200WHS17-A000 Datasheet(PDF) 1 Page - Dynex Semiconductor

No. de Pieza. DIM200WHS17-A000
Descripción  Half Bridge IGBT Module
Descarga  8 Pages
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Fabricante  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
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DIM200WHS17-A000 Datasheet(HTML) 1 Page - Dynex Semiconductor

   
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DIM200WHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
www.dynexsemi.com
Replaces issue December 2003, version FDS5673-2.3
FDS5673-3.0 January 2004
FEATURES
I 10
µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Base Plate
APPLICATIONS
I Inverters
I Motor Controllers
I Induction Heating
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10
µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200WHS17-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1700V
V
CE(sat) *
(typ)
2.7V
I
C
(max)
200A
I
C(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
DIM200WHS17-A000
Half Bridge IGBT Module
Fig. 1 Half bridge circuit diagram
Fig. 2 Module outline
Outline type code: W
(See package details for further information)
3(C1)
1(E1C2)
2(E2)
6(G2)
7(E2)
5(E1)
4(G1)


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