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DIM200WHS17-A000 Datasheet(PDF) 5 Page - Dynex Semiconductor

No. de Pieza. DIM200WHS17-A000
Descripción  Half Bridge IGBT Module
Descarga  8 Pages
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Fabricante  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
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DIM200WHS17-A000 Datasheet(HTML) 5 Page - Dynex Semiconductor

   
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DIM200WHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/8
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
10
20
30
40
50
60
70
80
0
20
40
60
80
100 120
140
160
180
200
Collector current, IC - (A)
Eon
Eoff
Erec
Conditions:
Tc = 125˚C,
Rg = 4.7 ,
Vcc = 900V
0
20
40
60
80
100
120
140
410
Gate resistance, Rg - (Ohms)
56789
Conditions:
Tc = 125˚C,
IC = 100A,
Vcc = 900V
Eon
Eoff
Erec
0
100
50
150
200
250
300
350
400
0.5
0
1
1.5
2
2.5
3
3.5
4
4.5
5
Collector-emitter voltage, Vce - (V)
Common emitter.
Tcase = 25˚C
Vce is measured at power busbars
and not the auxiliary terminals
VGE = 20V
15V
12V
10V
0
150
100
50
200
250
300
350
400
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Collector-emitter voltage, Vce - (V)
Common emitter.
Tcase = 125˚C
Vce is measured at power busbars
and not the auxiliary terminals
VGE = 20V
15V
12V
10V


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