DIM200WHS17-A000

6/8

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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Fig. 7 Diode typical forward characteristics

Fig. 8 Reverse bias safe operating area

Fig. 9 Diode reverse bias safe operating area

Fig. 10 Transient thermal impedance

0

50

100

150

200

250

300

350

400

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

and not the auxiliary terminals

0

50

100

150

200

250

300

350

400

450

0

200

400

600

800 1000 1200 1400 1600 1800

Conditions:

Module

Chip

0

50

100

150

200

250

300

350

400

0

400

800

1200

1600

2000

1

10

100

1000

0.001

0.01

1

0.1

10

Diode

Transistor

IGBT

τ

Diode

τ

1

2.10

0.11

4.49

0.01

2

11.62

3.14

25.28

3.21

3

43.85

45.60

74.24

38.58

4

29.53

143.02

90.09

113.97