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DIM200WHS17-A000 Datasheet(PDF) 6 Page - Dynex Semiconductor

No. de Pieza. DIM200WHS17-A000
Descripción  Half Bridge IGBT Module
Descarga  8 Pages
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Fabricante  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
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DIM200WHS17-A000 Datasheet(HTML) 6 Page - Dynex Semiconductor

   
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
0
50
100
150
200
250
300
350
400
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Foward voltage, VF - (V)
Tj = 125˚C
Tj = 25˚C
VF is measured at power busbars
and not the auxiliary terminals
0
50
100
150
200
250
300
350
400
450
0
200
400
600
800 1000 1200 1400 1600 1800
Collector emitter voltage, Vce - (V)
Conditions:
Tcase = 125˚C
Vge = 15V
Rg(off) = 4.7ohms
Module
Chip
0
50
100
150
200
250
300
350
400
0
400
800
1200
1600
2000
Reverse voltage, VR - (V)
Tj = 125˚C
1
10
100
1000
0.001
0.01
1
0.1
10
Pulse width, tp - (s)
Diode
Transistor
IGBT
Ri (˚C/KW)
τ
i (ms)
Diode
Ri (˚C/KW)
τ
i (ms)
1
2.10
0.11
4.49
0.01
2
11.62
3.14
25.28
3.21
3
43.85
45.60
74.24
38.58
4
29.53
143.02
90.09
113.97


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