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DIM200WKS12-A000 Datasheet(PDF) 2 Page - Dynex Semiconductor

No. de Pieza. DIM200WKS12-A000
Descripción  IGBT Chopper Module - Upper Arm Control
Descarga  8 Pages
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Fabricante  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
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DIM200WKS12-A000 Datasheet(HTML) 2 Page - Dynex Semiconductor

   
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DIM200WKS12-A000
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M6
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
(Antiparallel and freewheel diode)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation:
Al
2O3
Clearance:
13mm
Baseplate material: Cu
CTI (Critical Tracking Index): 175
Creepage distance: 24mm
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
˚C
Nm
Nm
Max.
90
194
15
150
125
125
5
5
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
–40
3
2.5
Test Conditions
V
GE = 0V
-
T
case = 80˚C
1ms, T
case = 115˚C
T
case = 25˚C, Tj = 150˚C
V
R = 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1 = 1300V, V2 = 1000V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2t
V
isol
Q
PD
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case = 25˚C unless stated otherwise
Units
V
V
A
A
W
kA2s
V
PC
Max.
1200
±20
200
400
1390
6.25
2500
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I2t value
Isolation voltage - per module
Partial discharge - per module


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