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DIM200WKS12-A000 Datasheet(PDF) 3 Page - Dynex Semiconductor

No. de Pieza. DIM200WKS12-A000
Descripción  IGBT Chopper Module - Upper Arm Control
Descarga  8 Pages
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Fabricante  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
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DIM200WKS12-A000 Datasheet(HTML) 3 Page - Dynex Semiconductor

   
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DIM200WKS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/8
www.dynexsemi.com
Test Conditions
V
GE = 0V, VCE = VCES
V
GE = 0V, VCE = VCES, Tcase = 125˚C
V
GE = ±20V, VCE = 0V
I
C = 10mA, VGE = VCE
V
GE = 15V, IC = 200A
V
GE = 15V, IC = 200A, , Tcase = 125˚C
DC
t
p = 1ms
I
F = 200A
I
F = 200A, Tcase = 125˚C
V
CE = 25V, VGE = 0V, f = 1MHz
-
-
T
j = 125˚C, VCC = 900V,
I
1
t
p ≤ 10µs, VCE(max) = VCES – L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
(IGBT and Diode arm)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
(IGBT and Diode arm)
Input capacitance
Module inductance - per arm
Internal transistor resistance
Short circuit. I
SC
ELECTRICAL CHARACTERISTICS
T
case = 25˚C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
SC
Data
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
m
A
A
Max.
0.25
6
1
6.5
2.7
3.1
200
400
2.5
2.6
-
-
-
-
-
Typ.
-
-
-
5.5
2.2
2.6
-
-
2.2
2.3
33
20
0.23
1375
1125
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Note:
Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + L
M


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