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DIM200WKS12-A000 Datasheet(PDF) 5 Page - Dynex Semiconductor

No. de Pieza. DIM200WKS12-A000
Descripción  IGBT Chopper Module - Upper Arm Control
Descarga  8 Pages
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Fabricante  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
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DIM200WKS12-A000 Datasheet(HTML) 5 Page - Dynex Semiconductor

   
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DIM200WKS12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/8
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
5
10
15
20
25
30
35
40
45
0
50
100
150
200
Collector current, IC - (A)
Eon
Eoff
Erec
Tc = 125˚C,
Vcc = 600V,
Rg = 4.7 Ohms
0
5
10
15
20
25
30
35
40
45
50
55
410
12
Gate resistance, Rg - (Ohms)
8
6
Eon
Eoff
Erec
Tc = 125˚C,
Vcc = 600V,
IC = 200A
0
50
100
150
200
250
300
350
400
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Collector-emitter voltage, Vce - (V)
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
Common emitter
Tcase = 25˚C
Vce is measured at power busbars
and not the auxiliary terminals
0
50
100
150
200
250
300
350
400
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Collector-emitter voltage, Vce - (V)
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
Common emitter
Tcase = 125˚C
Vce is measured at power busbars
and not the auxiliary terminals


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