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BSP100 Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BSP100
Descripción Electrónicos  N-channel enhancement mode TrenchMOS transistor
Download  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BSP100 Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
N-channel enhancement mode
BSP100
TrenchMOS
™ transistor
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 6 A;
-
23
mJ
energy
t
p = 0.2 ms; Tj prior to avalanche = 25˚C;
V
DD ≤ 15 V; RGS = 50 Ω; VGS = 10 V
I
AS
Non-repetitive avalanche
-
6
A
current
ELECTRICAL CHARACTERISTICS
T
j= 25˚C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 10 µA;
30
-
-
V
voltage
T
j = -55˚C
27
-
-
V
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
2
2.8
V
T
j = 150˚C
0.4
-
-
V
T
j = -55˚C
-
3.2
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 2.2 A
-
80
100
m
resistance
V
GS = 4.5 V; ID = 1 A
-
120
200
m
V
GS = 10 V; ID = 2.2 A; Tj = 150˚C
-
-
170
m
g
fs
Forward transconductance
V
DS = 20 V; ID = 2.2 A
2
4.5
-
S
I
D(ON)
On-state drain current
V
GS = 10 V; VDS = 1 V;
3.5
-
-
A
V
GS = 4.5 V; VDS = 5 V
2
-
-
A
I
DSS
Zero gate voltage drain
V
DS = 24 V; VGS = 0 V;
-
10
100
nA
current
V
DS = 24 V; VGS = 0 V; Tj = 150˚C
-
0.6
10
µA
I
GSS
Gate source leakage current V
GS = ±20 V; VDS = 0 V
-
10
100
nA
Q
g(tot)
Total gate charge
I
D = 2.3 A; VDD = 15 V; VGS = 10 V
-
6
-
nC
Q
gs
Gate-source charge
-
0.7
-
nC
Q
gd
Gate-drain (Miller) charge
-
0.7
-
nC
t
d on
Turn-on delay time
V
DD = 20 V; RD = 18 Ω;-
6
-
ns
t
r
Turn-on rise time
V
GS = 10 V; RG = 6 Ω
-8
-
ns
t
d off
Turn-off delay time
Resistive load
-
21
-
ns
t
f
Turn-off fall time
-
15
-
ns
L
d
Internal drain inductance
Measured tab to centre of die
-
2.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 20 V; f = 1 MHz
-
250
-
pF
C
oss
Output capacitance
-
88
-
pF
C
rss
Feedback capacitance
-
54
-
pF
February 1999
2
Rev 1.000


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