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NTLJF3117P Datasheet(PDF) 5 Page - ON Semiconductor

No. de Pieza. NTLJF3117P
Descripción  Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package
Descarga  8 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NTLJF3117P Datasheet(HTML) 5 Page - ON Semiconductor

   
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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
5
5
15
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
800
0
VGS
VDS
1000
400
010
VGS = 0 V
TJ = 25°C
Coss
Crss
1200
Ciss
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
1
100
tr
td(off)
td(on)
tf
10
VDD = −15 V
ID = −2.2 A
VGS = −4.5 V
2.5
0
0
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
VGS = 0 V
Figure 10. Diode Forward Voltage versus Current
1.0
1
0.6
2
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
TC = 25°C
TJ = 150°C
SINGLE PULSE
1 ms
100
ms
10 ms
dc
10
ms
TJ = 25°C
0.1
0.01
0
3
0
QG, TOTAL GATE CHARGE (nC)
5
4
4
3
ID = −2.2 A
TJ = 25°C
VGS
QGS
QGD
QT
2
1
5
8
0
20
12
4
VDS
16
3
0.8
0.4
0.2
600
200
1.5
0.5
TJ = 150°C
6
2
1
0.1
0.7
0.9
0.5
0.3
VDS = 0 V
*See Note 2 on Page 1


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