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NTLJF3117P Datasheet(PDF) 2 Page - ON Semiconductor

No. de Pieza. NTLJF3117P
Descripción  Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package
Descarga  8 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NTLJF3117P Datasheet(HTML) 2 Page - ON Semiconductor

   
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SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
VRRM
30
V
DC Blocking Voltage
VR
30
V
Average Rectified Forward Current
IF
2.0
A
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
RqJA
83
°C/W
Junction−to−Ambient – t
≤ 5 s (Note 3)
RqJA
54
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
177
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu.
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = −250 mA, Ref to 25°C
9.95
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VDS = −16 V, VGS = 0 V
TJ = 25°C
−1.0
mA
TJ = 85°C
−10
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8.0 V
±100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−0.4
−0.7
−1.0
V
Negative Threshold
Temperature Coefficient
VGS(TH)/TJ
2.44
mV/
°C
Drain−to−Source On−Resistance
RDS(on)
VGS = −4.5, ID = −2.0 A
75
100
m
W
VGS = −2.5, ID = −2.0 A
101
135
VGS = −1.8, ID = −1.6 A
150
200
Forward Transconductance
gFS
VDS = −5.0 V, ID = −2.0 A
3.1
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = −10 V
531
pF
Output Capacitance
COSS
91
Reverse Transfer Capacitance
CRSS
56
Total Gate Charge
QG(TOT)
VGS = −4.5 V, VDS = −10 V,
ID = −2.0 A
5.5
6.2
nC
Threshold Gate Charge
QG(TH)
0.7
Gate−to−Source Charge
QGS
1.0
Gate−to−Drain Charge
QGD
1.4
Gate Resistance
RG
8.8
W
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(ON)
VGS = −4.5 V, VDD = −5.0 V,
ID = −1.0 A, RG = 6.0 W
5.2
ns
Rise Time
tr
13.2
Turn−Off Delay Time
td(OFF)
13.7
Fall Time
tf
19.1
5. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.


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