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NTLJF3117P Datasheet(PDF) 3 Page - ON Semiconductor

No. de Pieza. NTLJF3117P
Descripción  Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package
Descarga  8 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NTLJF3117P Datasheet(HTML) 3 Page - ON Semiconductor

   
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MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Unit
Max
Typ
Min
Test Conditions
Symbol
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(ON)
VGS = −4.5 V, VDD = −10 V,
ID = −2.0 A, RG = 2.0 W
5.5
ns
Rise Time
tr
15
Turn−Off Delay Time
td(OFF)
19.8
Fall Time
tf
21.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
VSD
VGS = 0 V, IS = −1.0 A
TJ = 25°C
−0.75
−1.0
V
TJ = 125°C
−0.64
Reverse Recovery Time
tRR
VGS = 0 V, dISD/dt = 100 A/ms,
IS = −1.0 A
16.2
ns
Charge Time
ta
10.6
Discharge Time
tb
5.6
Reverse Recovery Time
QRR
5.7
nC
5. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.34
0.39
V
IF = 1.0 A
0.47
0.53
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
17
20
mA
VR = 20 V
3.0
8.0
VR = 10 V
2.0
4.5
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.22
0.35
V
IF = 1.0 A
0.40
0.50
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
0.22
2.5
mA
VR = 20 V
0.11
1.6
VR = 10 V
0.06
1.2
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.2
0.29
V
IF = 1.0 A
0.4
0.47
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
2.0
20
mA
VR = 20 V
1.1
10.9
VR = 10 V
0.63
8.4
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Capacitance
C
VR = 5.0 V, f = 1.0 MHz
38
pF
7. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
8. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz cu.
9. Pulse Test: pulse width
v 300 ms, duty cycle v2%.
10. Switching characteristics are independent of operating junction temperatures.


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