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NTLJF3118N Datasheet(PDF) 3 Page - ON Semiconductor

No. de Pieza. NTLJF3118N
Descripción  Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
Descarga  7 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NTLJF3118N Datasheet(HTML) 3 Page - ON Semiconductor

   
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SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.26
0.35
V
IF = 1.0 A
0.35
0.42
IF = 2.0 A
0.41
0.52
Maximum Instantaneous
Reverse Current
IR
VR = 20 V
0.20
5.0
mA
VR = 10 V
0.045
1.0
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.18
V
IF = 1.0 A
0.29
IF = 2.0 A
0.36
Maximum Instantaneous
Reverse Current
IR
VR = 20 V
4.9
mA
VR = 10 V
1.6
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.13
V
IF = 1.0 A
0.25
IF = 2.0 A
0.33
Maximum Instantaneous
Reverse Current
IR
VR = 20 V
42
mA
VR = 10 V
13
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Capacitance
C
VR = 5.0 V, f = 1.0 MHz
52.3
pF
ORDERING INFORMATION
Device
Package
Shipping
NTLJF3118NTAG
WDFN6
(Pb−Free)
3000 / Tape & Reel
NTLJF3118NTBG
WDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.


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