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NUS5530MN Datasheet(PDF) 2 Page - ON Semiconductor

No. de Pieza. NUS5530MN
Descripción  Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor
Descarga  9 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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NUS5530MN Datasheet(HTML) 2 Page - ON Semiconductor

   
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MAXIMUM RATINGS FOR PNP TRANSISTORS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−35
Vdc
Collector-Base Voltage
VCBO
−55
Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−2.0
Adc
Collector Current − Peak
ICM
−7.0
A
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS FOR P−CHANNEL FET
Characteristic
Symbol
Typ
Max
Unit
Maximum Junction−to−Ambient (Note 4)
t v 5 sec
Steady State
RqJA
40
80
50
95
°C/W
Maximum Junction−to−Foot (Drain)
Steady State
RqJF
15
20
°C/W
THERMAL CHARACTERISTICS FOR PNP TRANSISTORS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
635
5.1
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA (Note 1)
200
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
1.35
11
W
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA (Note 2)
90
°C/W
Thermal Resistance, Junction−to−Lead #1
RqJL
15
°C/W
Total Device Dissipation (Single Pulse < 10 sec)
PDsingle
(Notes 2 & 3)
2.75
W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR−4 @ 100 mm2, 1 oz copper traces.
2. FR−4 @ 500 mm2, 1 oz copper traces.
3. Thermal response.


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