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LM3503SQX-16 Datasheet(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza LM3503SQX-16
Descripción Electrónicos  Dual-Display Constant Current LED Driver with Analog Brightness Control
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM3503SQX-16 Datasheet(HTML) 6 Page - National Semiconductor (TI)

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Electrical Characteristics (Notes 6, 7) Limits in standard typeface are for T
J = +25˚C. Limits in bold
typeface apply over the full operating junction temperature range (−40˚C
≤ T
J
≤ +125˚C). Unless otherwise specified,V
IN =
2.5V. (Continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I
VOUT1(ON)
V
OUT1 Pin Bias
Current (Note 3)
V
OUT1 = 14V, En1 = En1 = 1.5V (16)
V
OUT1 = 23V, En1 = En2 = 1.5V (25)
V
OUT1 = 32V, En1 = En2 = 1.5V (35)
V
OUT1 = 42V, En1 = En2 = 1.5V (44)
40
50
50
85
80
100
100
140
µA
I
VOUT2
V
OUT2Pin Leakage
Current (Note 3)
Fb = En1 = En2 = 0V, V
OUT2 =VOUT1 = 42V
0.1
3
µA
UVP
Under-Voltage
Protection
On Threshold
Off Threshold
2.2
2.4
2.3
2.5
V
OVP
Over-Voltage
Protection (Note 5)
On Threshold (16)
Off Threshold (16)
On Threshold (25)
Off Threshold (25)
On Threshold (35)
Off Threshold (35)
On Threshold (44)
Off Threshold (44)
14.5
14.0
22.5
21.5
32.0
31.0
40.5
39.0
15.5
15
24
23
34
33
42
41
16.5
16.0
25.5
24.5
35.0
34.0
43.5
42.0
V
V
En1
PMOS FET Switch
and Device Enabling
Threshold (Figure 1:
P1)
Off Threshold
0.8
0.3
V
On Threshold
1.4
0.8
V
En2
NMOS FET Switch
and Device Enabling
Threshold (Figure 1:
N2)
Off Threshold
0.8
0.3
V
On Threshold
1.4
0.8
I
En1
En1 Pin Bias Current
(Note 3)
En1 = 2.5V
En1=0V
7
0.1
14
µA
I
En2
En2 Pin Bias Current
(Note 3)
En2 = 2.5V
En2=0V
7
0.1
14
µA
Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical characteristic specifications do not apply when
operating the device outside of its rated operating conditions.
Note 2: The human body model is a 100 pF capacitor discharged through a 1.5 k
Ω resistor into each pin. The machine model is a 200 pF capacitor discharged
directly into each pin.
Note 3: Current flows into the pin.
Note 4: The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction-to-ambient thermal resistance, θJA, and
the ambient temperature, TA. See Thermal Properties for the thermal resistance. The maximum allowable power dissipation at any ambient temperature is calculated
using: PD(MAX) =(TJ(MAX)–TA)/ θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature. For more information on this topic,
please refer to Application Note 1187(An1187): Leadless Leadframe Package (LLP) and Application Note 1112(AN1112) for microSMD chip scale package.
Note 5: The on threshold indicates that the LM3503 is no longer switching or regulating LED current, while the off threshold indicates normal operation.
Note 6: All voltages are with respect to the potential at the GND pin.
Note 7: Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm.
Note 8: NMOS Power On Resistance measured at ISW= 250mA for sixteen voltage version.
www.national.com
6


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