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Datasheet and Application

EiceDRIVER™ 2ED020I12-F

1

Overview

The 2ED020I12-F is a high voltage, high speed power IGBT and MOSFET driver of the eupec EiceDRIVER™ family with

interlocking high and low side referenced output channels. The floating high side driver may be supplied directly or by means

of a bootstrap diode and capacitor. In addition to the logic input of each driver the 2ED020I12-F is equipped with a dedicated

shutdown input. All logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high pulse current buffer

stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency appli-

cations. Both drivers are designed to drive an n-channel power IGBT or MOSFET which operates up to 1200 V. In addition, a

general purpose operational amplifier and a general purpose comparator are provided, which may be used e.g. for current

measurement or over current detection.

Product Highlights

• Fully operational to ±1200 V

• Gate drive supply range from 13 to 18 V

• Gate drive currents of +1 A / –2 A

• Matched propagation delay for both channels

• High dV/dt immunity

• General purpose operational amplifier

• General purpose comparator

Features

• Floating high side driver

• Under-voltage lockout for both channels

• 3.3 V and 5 V TTL compatible inputs

• CMOS Schmitt-triggered inputs with internal pull-down

• CMOS Schmitt-triggered shutdown with internal pull-up

• Non-inverting inputs

• Interlocking inputs

• Dedicated shutdown input with internal pull-up

• IEC compliant (pending)

• UL recognized (pending)

1.1

Coreless transformer (CLT) technology

In various IGBT and power MOSFET driver stages are optocoupler, level shifter or discrete transformer included to overcome

the isolation barrier between the low side input and high side output. All of them have their typical advantages and disadvan-

tages. As an alternative for low and medium power applications the coreless transformer technology combines almost all

advantages and at the same time avoiding almost all disadvantages of these devices by a very cost efficient way and high

voltage isolation capability.

The principle function of the CLT is realized by two coils which are compounded on silicon within one integrated circuit. The

isolation between these coils can withstand in the current design at least up to 1200 V whereby a functional isolation is

achieved. Figure 1 shows a schematic of the internal stages of the IC.

Figure 1

IC schematic