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BT137B Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BT137B
Descripción Electrónicos  Triacs sensitive gate
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BT137B Datasheet(HTML) 3 Page - NXP Semiconductors

  BT137B Datasheet HTML 1Page - NXP Semiconductors BT137B Datasheet HTML 2Page - NXP Semiconductors BT137B Datasheet HTML 3Page - NXP Semiconductors BT137B Datasheet HTML 4Page - NXP Semiconductors BT137B Datasheet HTML 5Page - NXP Semiconductors BT137B Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Triacs
BT137B series
Fig.1. Maximum on-state dissipation, P
tot, versus rms
on-state current, I
T(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS) ,
versus mounting base temperature T
mb.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb ≤ 102˚C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25˚C), versus junction temperature Tj.
02
468
10
0
2
4
6
8
10
12
= 180
120
90
60
30
BT137
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
121
117
113
109
105
101
1
-50
0
50
100
150
0
2
4
6
8
10
BT137
102 C
Tmb / C
IT(RMS) / A
BT137
10us
100us
1ms
10ms
100ms
10
100
1000
BT137
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T2- G+ quadrant
dI /dt limit
T
0.01
0.1
1
10
0
5
10
15
20
25
BT137
surge duration / s
IT(RMS) / A
1
10
100
1000
0
BT137
Number of cycles at 50Hz
ITSM / A
1
10
20
30
40
50
60
70
80
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
October 1997
3
Rev 1.200


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