HN29WT800 datasheet(31/37 Pages) HITACHI

No. de pieza	HN29WT800

Descripción Electrónicos	1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory

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Fabricante Electrónico	HITACHI [Hitachi Semiconductor]

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HN29WT800 Series, HN29WB800 Series

31

Data Protection Operation

Page programming and Block Erasing can be locked by programming a nonvolatile lock bit for each block.

When

WP is V

IL level, those locked blocks as reflected by the Block-Lock Status bits, are protected from

inadvertent Page programming or Block Erasing.

Programmed block data and Lock-Bit Data can be locked When

WP is V

IL level.

Operation start

Operation end

Lock bit data programmed

Page program error (SR.4 = 1)

Write page program command (41H)

Write clear status register command (50H)

Write page program data

(WDn, n = 00H to FFH, 00H to 7FH)

WP = VIL level (Block lock!)

Operation start

Operation end

Lock bit data programmed

Block erase error (SR.5 = 1)

Write block erase command (20H)

Write clear status register command (50H)

Write erase confirm command (D0H)

WP = VIL level (Block lock!)

Número de pieza similar - HN29WT800

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Hitachi Semiconductor	HN29W12811	315Kb / 42P	128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
	HN29W12811T-60	315Kb / 42P	128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)
	HN29W25611	347Kb / 43P	256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
	HN29W25611T	331Kb / 42P	256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
	HN29W25611T-50	347Kb / 43P	256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

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