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NM27C512QE120 Datasheet(PDF) 8 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza NM27C512QE120
Descripción Electrónicos  524,288-Bit (64K x 8) High Performance CMOS EPROM
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

NM27C512QE120 Datasheet(HTML) 8 Page - National Semiconductor (TI)

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Functional Description (Continued)
are held at VIL Address pin A0 is held at VIL for the manu-
facturer’s code and held at VIH for the device code The
code is read on the eight data pins O0–O7 Proper code
access is only guaranteed at 25 C g5 C
ERASURE CHARACTERISTICS
The erasure characteristics of the device are such that era-
sure begins to occur when exposed to light with wave-
lengths shorter than approximately 4000 Angstroms ( ) It
should be noted that sunlight and certain types of fluores-
cent lamps have wavelengths in the 3000 – 4000
range
The recommended erasure procedure for the EPROM is ex-
posure to short wave ultraviolet light which has a wave-
length of 2537
The integrated dose (ie UV intensity c
exposure
time)
for
erasure
should
be
minimum
of
15W-seccm2
The EPROM should be placed within 1 inch of the lamp
tubes during erasure Some lamps have a filter on their
tubes which should be removed before erasure Table III
shows the minimum EPROM erasure time for various light
intensities
An erasure system should be calibrated periodically The
distance from lamp to device should be maintained at one
inch The erasure time increase as the square of the dis-
tance from the lamp (if distance is doubled the erasure time
increases by factor of 4) Lamps lose intensity as they age
When a lamp is changed the distance has changed or the
lamp has aged the system should be checked to make cer-
tain full erasure is occurring Incomplete erasure will cause
symptoms that can be misleading Programmers compo-
nents and even system designs have been erroneously
suspected when incomplete erasure was the problem
SYSTEM CONSIDERATION
The power switching characteristics of EPROMs require
careful decoupling of the devices The supply current ICC
has three segments that are of interest to the system de-
signer the standby current level the active current level
and the transient current peaks that are produced by volt-
age transitions on input pins The magnitude of these tran-
sient current peaks is dependent of the output capacitance
loading of the device The associated VCC transient voltage
peaks can be suppressed by properly selected decoupling
capacitors It is recommended that at least a 01 mF ceramic
capacitor be used on every device between VCC and GND
This should be a high frequency capacitor of low inherent
inductance In addition at least a 47 mF bulk electrolytic
capacitor should be used between VCC and GND for each
eight devices The bulk capacitor should be located near
where the power supply is connected to the array The pur-
pose of the bulk capacitor is to overcome the voltage drop
caused by the inductive effects of the PC board traces
Mode Selection
The modes of operation of the NM27C512 are listed in Table I A single 5V power supply is required in the read mode All
inputs are TTL levels excepts for VPP and A9 for device signature
TABLE I Mode Selection
Pins
CE PGM
OE VPP
VCC
Outputs
Mode
Read
VIL
VIL
50V
DOUT
Output Disable
X
VIH
50V
High Z
(Note 1)
Standby
VIH
X
50V
High Z
Programming
VIL
1275V
625V
DIN
Program Verify
VIL
VIL
625V
DOUT
Program Inhibit
VIH
1275V
625V
High Z
Note 1
X can be VIL or VIH
TABLE II Manufacturer’s Identification Code
Pins
A0
A9
07
06
05
04
03
02
01
00
Hex
(10)
(24)
(19)
(18)
(17)
(16)
(15)
(13)
(12)
(11)
Data
Manufacturer Code
VIL
12V
10001111
8F
Device Code
VIH
12V
10000101
85
8


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