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BTA212X Datasheet(PDF) 1 Page - NXP Semiconductors |
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BTA212X Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 4 page Philips Semiconductors Preliminary specification Three quadrant triacs BTA212X series C high commutation GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a full pack, plastic envelope intended for use in circuits where high BTA212X- 500C 600C 800C static and dynamic dV/dt and high V DRM Repetitive peak off-state 500 600 800 V dI/dt can occur. These devices will voltages commutate the full rated rms current I T(RMS) RMS on-state current 12 12 12 A at the maximum rated junction I TSM Non-repetitive peak on-state 95 95 95 A temperature, without the aid of a current snubber. PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 V DRM Repetitive peak off-state - 500 1 600 1 800 V voltages I T(RMS) RMS on-state current full sine wave; - 12 A T hs ≤ 56 ˚C I TSM Non-repetitive peak full sine wave; on-state current T j = 25 ˚C prior to surge t = 20 ms - 95 A t = 16.7 ms - 105 A I 2tI2t for fusing t = 10 ms - 45 A 2s dI T/dt Repetitive rate of rise of I TM = 20 A; IG = 0.2 A; 100 A/ µs on-state current after dI G/dt = 0.2 A/µs triggering I GM Peak gate current - 2 A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any 20 ms - 0.5 W period T stg Storage temperature -40 150 ˚C T j Operating junction - 125 ˚C temperature T1 T2 G 12 3 case 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/ µs. October 1997 1 Rev 1.000 |
Número de pieza similar - BTA212X |
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Descripción similar - BTA212X |
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