K6E1004C1B datasheet(6/9 Pages) SAMSUNG

No. de pieza	K6E1004C1B

Descripción Electrónicos	256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out

Download	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	SAMSUNG [Samsung semiconductor]

Página de inicio	http://www.samsung.com/Products/Semiconductor

Logo

6 / 9 page

K6E1004C1B-C/B-L

CMOS SRAM

PRELIMINARY

Rev. 3.0

- 6 -

July 1998

NOTES(READ CYCLE)

1. WE is high for read cycle.

2. All read cycle timing is referenced from the last valid address to the first transition address.

3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or

VOL levels.

4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to

device.

5. Transition is measured

±200mV space from steady state voltage with Load(B). This parameter is sampled and not 100%

tested.

6. Device is continuously selected with CS=VIL.

7. Address valid prior to coincident with CS transition low.

8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.

TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)

Address

CS

tWP(2)

tDW

tDH

Valid Data

WE

Data in

Data out

tWC

tWR(5)

tAW

tCW(3)

High-Z(8)

High-Z

OE

tOHZ(6)

tAS(4)

TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)

Address

CS

tWP1(2)

tDW

tDH

tOW

tWHZ(6)

Valid Data

WE

Data in

Data out

tWC

tAS(4)

tWR(5)

tAW

tCW(3)

(10)

(9)

High-Z(8)

High-Z

Número de pieza similar - K6E1004C1B

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Samsung semiconductor	K6E0808C1C	168Kb / 8P	32Kx8 Bit High Speed CMOS Static RAM
	K6E0808C1C-12	168Kb / 8P	32Kx8 Bit High Speed CMOS Static RAM
	K6E0808C1C-15	168Kb / 8P	32Kx8 Bit High Speed CMOS Static RAM
	K6E0808C1C-20	168Kb / 8P	32Kx8 Bit High Speed CMOS Static RAM
	K6E0808C1C-C	168Kb / 8P	32Kx8 Bit High Speed CMOS Static RAM

More results

Descripción similar - K6E1004C1B

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Samsung semiconductor	KM641001B	134Kb / 9P	256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out
	K6R1004C1B	128Kb / 8P	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
	KM641003B	130Kb / 8P	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
	K6R1004C1A	127Kb / 8P	256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out
	K6R1004V1C-C	137Kb / 9P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
	KM68V257C	197Kb / 9P	32Kx8 Bit High Speed Static RAM(3.3V Operating), Evolutionary Pin out.
	K6R1004C1C	101Kb / 9P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
	K6R1004C1D	188Kb / 9P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
	KM641003C	127Kb / 8P	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating)
	KM68257C	190Kb / 10P	32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range.

More results

K6E1004C1B Datasheet(PDF) 6 Page - Samsung semiconductor

K6E1004C1B Datasheet(HTML) 6 Page - Samsung semiconductor

Número de pieza similar - K6E1004C1B

Descripción similar - K6E1004C1B

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Descarga

Enlace URL