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BTA216X Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BTA216X
Descripción Electrónicos  Three quadrant triacs guaranteed commutation
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BTA216X Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Objective specification
Three quadrant triacs
BTA216X series D, E and F
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance
full or half cycle
junction to heatsink
with heatsink compound
-
-
4.0
K/W
without heatsink compound
-
-
5.5
K/W
R
th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA216X-
...D
...E
...F
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
-
-
5
10
25
mA
T2+ G-
-
-
5
10
25
mA
T2- G-
-
-
5
10
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
-
15
20
25
mA
T2+ G-
-
-
25
30
40
mA
T2- G-
-
-
25
30
40
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
-
15
25
30
mA
V
T
On-state voltage
I
T = 20 A
-
1.2
1.5
V
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 ˚C
I
D
Off-state leakage current
V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 ˚C
2 Device does not trigger in the T2-, G+ quadrant.
October 1999
2
Rev 1.000


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