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BTA216X Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BTA216X
Descripción Electrónicos  Three quadrant triacs guaranteed commutation
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BTA216X Datasheet(HTML) 3 Page - NXP Semiconductors

  BTA216X Datasheet HTML 1Page - NXP Semiconductors BTA216X Datasheet HTML 2Page - NXP Semiconductors BTA216X Datasheet HTML 3Page - NXP Semiconductors BTA216X Datasheet HTML 4Page - NXP Semiconductors BTA216X Datasheet HTML 5Page - NXP Semiconductors  
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Philips Semiconductors
Objective specification
Three quadrant triacs
BTA216X series D, E and F
guaranteed commutation
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA216X-
...D
...E
...F
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max);30
60
70
-
-
V/
µs
off-state voltage
T
j = 110 ˚C; exponential
waveform; gate open
circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 110 ˚C;
1.8
3.5
4.5
-
-
A/ms
commutating current
I
T(RMS) = 16 A;
dV
com/dt = 20v/µs; gate
open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 110 ˚C;
4.3
5.3
6.3
-
-
A/ms
commutating current
I
T(RMS) = 16 A;
dV
com/dt = 0.1v/µs; gate
open circuit
t
gt
Gate controlled turn-on
I
TM = 20 A; VD = VDRM(max);-
-
-
2
-
µs
time
I
G = 0.1 A; dIG/dt = 5 A/µs
October 1999
3
Rev 1.000


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